Transistors
1
Publication date: April 2007 SJC00357AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC3930G
Silicon NPN epitaxial planar type
For high-frequency amplification
Complementary to 2SA1532G
■ Features
• Optimum for RF amplification of FM/AM radios
• High transition frequency f
T
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
30 V
Collector-emitter voltage (Base open) V
CEO
20 V
Emitter-base voltage (Collector open) V
EBO
5V
Collector current I
C
30 mA
Collector power dissipation P
C
150 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 10 V, I
E
= 0 0.1 µA
Forward current transfer ratio
*
h
FE
V
CB
= 10 V, I
E
= −1 mA 70 220
Transition frequency f
T
V
CB
= 10 V, I
E
= −1 mA, f = 200 MHz 150 250 MHz
Noise figure NF V
CB
= 10 V, I
E
= −1 mA, f = 5 MHz 2.8 4.0 dB
Reverse transfer impedance Z
rb
V
CB
= 10 V, I
E
= −1 mA, f = 2 MHz 22 50 Ω
Reverse transfer capacitance C
re
V
CB
= 10 V, I
E
= −1 mA, f = 10.7 MHz 0.9 1.5 pF
(Common emitter)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Rank B C
h
FE
70 to 140 110 to 220
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
■ Package
• Code
SMini3-F2
• Marking Symbol: V
• Pin Name
1.Base
2.Emitter
3.Collector
